物理与信息工程学院

联系电话

18959206002

电子邮箱

zwhuang@mnnu.edu.cn

办公地点

科北905

通讯地址

漳州市芗城区闽南师范大学物理与信息工程学院，363000

个人简介

黄志伟副教授，工学博士，漳州市D类高层次人才。

本硕博均毕业于“双一流”高校厦门大学。2013年获物理学学士学位，2019年获微电子学与固体电子学博士学位。

长期聚焦半导体前沿技术，致力于高性能光电器件的创新设计与工艺实现，在半导体微电子芯片制备、集成电路制造工艺技术方面积累了深厚的研发经验。

研究方向

半导体光电探测器芯片制备：专注于开发高性能（如超低暗电流、宽光谱响应）硅基及新型异质结光电探测器，服务于光通信、成像传感等应用。

二维材料制备与器件应用：探索二维材料在下一代光电子器件中的潜力。

社会兼职

研究成果

作为通讯作者或第一作者，近年在IEEE等高水平刊物发表学术论文如下：

1、Ge Y, Huang Z*, et al. 300–2200 nm Broadband Si Schottky Photodetectors With Ultra-Low Dark Current (<10 nA/cm²) via Al₂O₃/SiO_x Interface Engineering. IEEE Journal of Lightwave Technology, 2025, 43, 8832.

2、Ge Y, Huang Z*, Yang M, et al. 532–2200 nm Si Schottky Photodetectors Featuring Nonuniform Barrier Layers. IEEE Transactions on Electron Devices, 2025,72, 3667.

3、Ke S, Wang J, Huang Z*, et al. Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface. Physica Scripta, 2024, 99(5): 055006.

4、Jiang R, Chen F, Zheng Z, Ke S, Zhou J, Liu G, Huang Z*. Simulation and Analysis of Extinction Properties of Rh Nanostructures. Laser & Optoelectronics Progress, 2023, 60(19): 1925001.

5、Chen F, Jiang R, Zheng Z, Ke S, Zhou J, Liu G, Huang Z*. Simulation and Analysis of Infrared Extinction Characteristics of ITO Nanorod Structures. Acta Optica Sinica, 2023, 43(9): 0916002.

6、Huang Z, et al. High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode. Chinese Physics B, 2021, 30(3): 037303.

7、Huang Z, Wang J, Huang W, et al. Research progress of technologies for germanium near-infrared photodetectors[J]. Infrared and Laser Engineering, 2020, 49(1): 0103004.

8、Huang Z, Yu C, Chang A, et al. High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain. Journal of Materials Science, 2020, 55(20): 8630-8641.

9、Yu C, Huang Z, et al. High-specific-detectivity, low-dark-current Ge nanowire metal–semiconductor–metal photodetectors fabricated by Ge condensation method. Journal of Physics D: Applied Physics 53.12: 125103 (2020).

10、Huang Z, Mao Y, Lin G,et al. Impacts of ITO interlayer thickness on metal/n-Ge contacts. Materials Science and Engineering: B, 2017, 224: 103-109.

11、Huang Z, Mao Y, Lin G,et al. Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors. Optics Express, 2018, 26(5): 5827-5834.

12、Huang Z, Mao Y, Chang A, et al. Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection. Applied Physics Express, 2018, 11(10): 102203.

13、Huang Z, et al. Impacts of excimer laser annealing on Ge epilayer on Si. Appl. Phys. A 123:148(2017).

14、Huang Z, et al. Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact. Applied Physics Express 2016, 9, 021301.

近年主持的项目：

1、基于键合材料高性能ITO/Si基n-Ge肖特基光电探测器的研制，福建省自然科学基金，2023-2026。

2、近红外局域表面等离激元共振增强Ge肖特基光电探测器基础研究，2023-2025.

课题组团队拥有良好的科研氛围和实验条件。欢迎对半导体器件物理、微纳加工工艺、光电器件设计、新型材料应用充满热情，有志于在集成电路、光电子技术、半导体工艺领域深入钻研的优秀学子加入！