柯少颖

物理与信息工程学院   

联系电话

 19500138159

电子邮箱

 syke@mnnu.edu.cn

办公地点

 科技楼北906

通讯地址

漳州市芗城区闽南师范大学物理与信息工程学院，363000

个人简介

柯少颖，男，博士，教授；院长助理、闽江学者青年学者、福建省C类人才、龙江计划拔尖人才、国家一流本科课程负责人、福建省一流本科课程负责人、硕士生导师、微电子科学与工程专业负责人、物信学院教工第二支部书记；主持国家自然科学基金面上项目和青年项目各1项、闽江学者人才项目1项、福建省自然科学基金面上项目2项、漳州市自然科学基金1项、横向项目6项(含金额500万项目1项、20万项目3项)；研究方向：硅基光电子材料与红外探测器、雪崩光电探测器、半导体材料键合；以第一作者或通讯作者发表SCI论文60余篇，授权发明专利11项，实审发明专利10项；累计指导17名硕士研究生和40余名本科毕业生。截至目前，指导的本科生发表SCI、EI论文17篇，其中6篇被SCI收录，5篇被中国卓越期刊收录，多人获评优秀毕业论文。近年来，指导的研究生在ACS Photonics、Small、OE等国际顶尖期刊发表论文20余篇，其中SCI一区论文10余篇。毕业的研究生有4人考取厦门大学、中科院苏州纳米所等顶尖单位的博士研究生，其余毕业生也多就职于国内半导体龙头企业，成为技术骨干，年薪＞20万。获得第十四届福建省自然科学优秀学术论文三等奖、闽南师范大学优秀共产党员、闽南师范大学2020年度青年五四奖章、2023年获批福建省一流本科课程、2025年获批国家一流本科课程。

研究方向

集成电路、光电子材料与器件、红外探测器、雪崩光电探测器、异质外延生长、二维材料与器件、异质晶圆键合、光电芯片研制

社会兼职

建行漳州分行“智库”专家、中国电子学会会员

研究成果

一、主持的课题

一）纵向课题：

1. 闽江学者青年学者(省级、100万)

硅基半导体异质结构光电探测器研究

(2025.02-2028.02)

2. 国家自然科学基金面上项目(国家级、54万)

Si基InP赝衬底匹配外延GeSn机理及GeSn中波红外线阵探测器研究(2026.01-2029.12)

3. 国家自然科学基金(国家级、30万)

全键合长波长InGaAs/Si单光子雪崩探测器基础研究

(2021.1-2023.12)

4. 福建省自然科学基金(省级、10万)

InP-O-I基高Sn组分GeSn薄膜外延生长研究

(2024.11-2027.11)

5. 福建省自然科学基金(省级、7万)

Si基GeSn短波红外全光谱PIN光电探测器基础研究

(2021.1-2023.12)

6. 漳州市自然科学基金(市级、2万)

InGaAs/Si异族键合基础研究

(2020.01.01-2022.12.31)

7. 虚拟仿真实验室建设资金(省级、35.8万)

集成电路制造工艺虚拟仿真实验设计与开发

(2021.9-2023.9)

8. 创新平台运行经费(30万)

硅基光电芯片研发创新平台

(2022-2025)

二）横向项目：

1. XXX微光CMOS图像传感显示模块雏形研发(500万)

(2022.1-2024.7)

2. 半导体光电芯片工艺开发与芯片加工(20万)

(2022.10-2025.10)

3. 硅基分子束外延XXX工艺技术开发(20万)

(2024.04-2025.04)

4. 单晶二维过渡金属硫族化合物制备及其光电器件开发(20万)

(2024.07-2027.07)

5. 单晶二维材料制备与转移技术开发(4.7万)

(2022.11-2023.11)

6. 原子层沉积工艺技术开发(3.7万)

(2022.11-2023.11)

二、发表的论文

[1] SHI, Z. W., et al. InGaAs/Si Avalanche Photodiode With High Gain and Low Dark Current Achieved by Two-Step Wafer Bonding. IEEE Transactions on Electron Devices, 2025.  

[2] DIAO, Y. L., et al. Magnetron sputtering growth and growth mechanism of GeSn films with Sn content exceeding 25% on InP substrates. Applied Surface Science, 2025, 699: 163122.  

[3] WANG, Z. R., et al. High-Gain Ge/Si Avalanche Photodetector With Stable Operation Temperature Up to 500 K. IEEE Electron Device Letters, 2025.  

[4] MENG, W. H., et al. High-speed low-noise InGaAs/InP PIN photodetectors on a Si platform achieved by oxygen plasma activation bonding. Optics Letters, 2025, 50(11): 3549–3552.  

[5] XU, X. J., et al. Selenization Mechanism of Nearly 4 in. Single-Oriented PtSe₂ and PtSe₂/n–-Si/n⁺-Si 2D–3D PIN Wide-Spectrum Polarization Detectors. ACS Applied Materials & Interfaces, 2025, 17(20): 29910–29922.  

[6] XU, X. J., et al. Stable Self-Powered Broadband PtSe₂/Si Pin Infrared Photodetector Based on a High-Quality Ultrapure Intrinsic Si Film Exfoliated by Si/SOI Wafer Bonding. ACS Applied Materials & Interfaces, 2025, 17(10): 15579–15592.  

[7] LIU, B., et al. Quantum-Confined 0D/2D/3D Heterostructure Photodetectors with an Ultrafast Self-Powered Broadband Response for Short-Wave Infrared Imaging. ACS Applied Materials & Interfaces, 2025.  

[8] KE, S. Q., et al. In Situ Selenization Engineered Dual Schottky Heterojunctions: A Novel Architecture for High‐Speed Broadband Photonic Communication Detector Arrays. Small, 2025: e07077.  

[9] LI, J. H., et al. Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer. Optics Express, 2024, 32(27): 48858–48874.  

[10] SHI, Z. W., et al. Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product. Physica Scripta, 2024, 99(11): 115501.  

[11] CHEN, S. P., et al. High-Speed Self-Powered PdSe₂/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe₂ Quantum Island Structure. ACS Applied Materials & Interfaces, 2024, 16(32): 42577–42587.  

[12] YE, S. M., et al. Microstructure and ferromagnetism of Mn₀.₀₅Ge₀.₉₅ quantum dots/graphene heterostructures for spintronic devices. ACS Applied Nano Materials, 2024, 7(14): 16542–16552.  

[13] JI, T., et al. High-speed broadband PtSe₂/Si 2D-3D pin photodetector with a lightly n-doped Si interlayer based on single-oriented PtSe₂. ACS Photonics, 2024, 11(8): 3150–3159.  

[14] SUN, Z. W., et al. Nanometer-thick CsPbBr₃ films with embedded CsPb₂Br₅ nanowires for photodetector applications. ACS Applied Nano Materials, 2024, 7(10): 11785–11793.  

[15] KE, S. Y., et al. Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface. Physica Scripta, 2024, 99(5): 055006.  

[16] WU, D. Z., et al. Microstructure and room temperature ferromagnetism of double-layered MnₓGe₁−ₓTe polycrystalline modified by the space-layer thickness. Applied Surface Science, 2024, 657: 159837.  

[17] WANG, J., et al. Interface characteristics of InP/Si heterojunction fabricated by low-temperature wafer bonding based on microcrystalline Ge interlayer. Vacuum, 2024, 223: 113103.  

[18] TAN, C. H., et al. Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing. Applied Surface Science, 2024, 657: 159707.  

[19] YAO, L. Q., et al. Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging. Journal of Physics D: Applied Physics, 2024, 57(16): 165103.  

[20] CHEN, X. P., et al. Low voltage-driven, high-performance TiO₂ thin film transistors with MHz switching speed. RSC Advances, 2024, 14(9): 6058–6063.  

[21] BAO, S. Y., et al. High-gain bandwidth product of wafer-bonded near-infrared III-V/silicon APD using polycrystalline silicon bonding layer. Physica Scripta, 2023, 98(12): 125527.  

[22] HUANG, Y., et al. Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer. Journal of Alloys and Compounds, 2023, 965: 171485.  

[23] LI, J., KE, S., WANG, J., et al. High-quality Ge/Si hetero-bonding by sputtered microcrystalline Ge interlayer. Vacuum, 2023: 112203.  

[24] LIN, G., QIAN, K., DING, H., …, KE, S., et al. Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering. Applied Surface Science, 2023, 623: 157086.  

[25] JIAO, J., CHEN, X., RAO, Y., …, KE, S., et al. High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer. Applied Surface Science, 2023, 628: 157296.  

[26] CHAI, J., KE, S., HUANG, Y., et al. Effect of bubbles at the bonded interface on the performance of GeSn/Si PIN photodetector. Physica Scripta, 2023, 98(6): 065517.  

[27] CHEN, X., JIAO, J., YAO, L., …, KE, S., et al. Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector. Applied Optics, 2023, 62(12): 3125–3131.  

[28] KE, S., XIAO, X., JIAO, J., et al. Theoretical achievement of THz gain-bandwidth product of wafer-bonded InGaAs/Si avalanche photodiodes with poly-Si bonding layer. IEEE Transactions on Electron Devices, 2022, 69(3): 1123–1128.  

[29] KE, S., LI, J., WANG, J., et al. Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer. Vacuum, 2022, 203: 111269.  

[30] LI, X., WANG, Y., CHEN, T., et al. Unencapsulated CsPbClBr₂ Film Photodetectors Grown by Thermal Vacuum Deposition Exhibit Exceptional Environmental Stability in High-Humidity Air. ACS Applied Energy Materials, 2022, 5(7): 8709–8716.  

[31] HUANG, D., JI, R., YAO, L., …, KE, S., et al. Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process. Vacuum, 2022, 196: 110735.  

[32] HUANG, D., JI, R., YAO, L., …, KE, S., et al. Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature. Applied Surface Science, 2021, 568: 150979.   

三、发明专利

1. 利用非晶锗薄膜实现低温Si-Si键合的方法

2. 弱键合强度脆性键合样品截面透射电子显微镜制备方法

3. 一种无界面气泡绝缘层上锗键合方法

4. 一种耐高温高质量SOI基剥离Ge薄膜的制备方法

5. 一种无气泡无穿透位错Ge/Si异质混合集成方法

6. 一种超高质量SOI基键合Ge薄膜的制备方法

7. 一种提高剥离Si基和SOI基Ge薄膜质量的方法

8. 一种实现晶格阻断的零气泡Ge/Si异质混合集成方法

9. 一种无气泡坑超高质量SOI基Ge薄膜异质键合方法