硅基半导体光电芯片研发创新团队

硅基半导体光电芯片研发创新团队

——光电子材料与器件集成实验室&微电子工艺实验室

光电子材料与器件集成实验室&微电子工艺实验室于2019年筹划建立。实验室聚焦于微电子与光电子专业相关的多个前沿方向，包括传统半导体薄膜材料、二维材料、纳米材料、红外光电探测器、红外激光器、集成电路及太阳能电池等。

截至目前，实验室已承担近20项科研项目，包括企业关键技术开发项目（500万元）、国家自然科学基金、省市级自然科学基金等，累计到账经费约400万元。已发表SCI、EI等高水平论文100余篇，授权专利15项。近五年来，指导学生在创新创业训练计划项目中获国家级立项2项、省级立项4项，并在各类专业竞赛中获得省级以上奖项20余项。

闽南师范大学近年来持续加大对光电子专业的支持力度，并逐步拓展至微电子领域。现已建成三个较为成熟的光电子与微电子实验室：“光电子材料与器件集成实验室”“微电子工艺实验室”和“硅基光电芯片研发实验室”。实验室均按微电子器件工艺的无尘化要求高标准设计和建设。

团队成员：

柯少颖（团队负责人）：博士、教授、硕士生导师、院长助理；闽江学者青年学者、福建省C类人才、龙江计划拔尖人才、国家一流本科课程负责人、福建省一流本科课程负责人、微电子科学与工程专业负责人、物信学院教工第二支部书记；主持国家自然科学基金面上和青年项目各1项、闽江学者人才项目1项、福建省自然科学基金面上项目2项、漳州市自然科学基金1项、横向项目6项；研究方向：硅基光电子材料与红外探测器、雪崩光电探测器、半导体材料键合；以第一作者或通讯作者发表SCI论文60余篇，授权发明专利11项；近3年内指导本科生毕业论文8次被评为优秀毕业论文，指导本科生发表SCI论文5篇、EI论文10篇；获得第十四届福建省自然科学优秀学术论文三等奖、闽南师范大学优秀共产党员、闽南师范大学2020年度青年五四奖章。

周锦荣：副教授，硕士生导师，研究方向：光电半导体材料特性及其应用、光电控制与智能信息处理。主持福建省自然科学基金1项、福建省资助省属高校科研专项1项、福建省教育厅产学研合作项目1项、漳州市重大科技专项1项、教育部产学合作协同育人项目4项、横向项目4项等；目前已在国内外期刊发表论文30余篇，获得福建省自然科学优秀学术论文三等奖2项。指导学生获得国家级大学生创新创业训练计划项目3项、福建省大学生创新创业训练计划项目10项；指导学生参加各类专业竞赛获得国家一等奖3项、国家二等奖4项、国家三等奖2项，省级一等奖21项，省级二等奖21项等。荣获福建省优秀教师、漳州市优秀党务工作者、漳州市第六批优秀青年科技人才、闽南师范大学优秀共产党员等荣誉称号。

黄志伟：博士，副教授，研究方向：锗硅光电探测器研制、Si基二维材料与器件制备、近红外局域表面等离激元研究。近5年主持福建省自然科学基金1项、闽南师范大学科技项目2项。在硅基异质外延、近红外肖特基光电二极管、宽光谱红外探测器、表面等离子激元等方面已取得显著成果。目前已在国内外知名期刊(IEEE Journal of Lightwave Technology、IEEE Transactions on Electron Devices、Optics Express、Materials Science and Engineering B等)发表20余篇半导体材料及器件制备论文。

陈赐海：博士，教授，硕士生导师，电子系系主任，研究方向：光电信息材料与器件，印刷电子。研究对象：薄膜晶体管，存储器，智能传感电子，微能量收集与系统自供电等。主持福建省自然科学基金项目2项、省自然科学基金指导性项目1项、闽南师范大学科技项目2项，校企合作项目1项，参与国家863计划和国家重点研发计划课题项目，国家自然科学基金，省级科技创新重点项目等。已在国内外期刊（J. Mater. Chem. C、IEEE Trans. Electron Devices、Optics Lett.、ACS Appl. Mater. Interfaces等）发表论文20余篇，申报专利5项。

刘冠洲：博士，副教授，硕士生导师，曾任天津三安光电有限公司高级工程师，负责GaAs光伏芯片、硅基二极管、硅基三极管器件的研发与生产，参与GaAs基LED与LD芯片的研发，具有10年的半导体光电芯片行业从业经验。研究方向：二维材料与器件制备、GaAs基多结太阳能电池。主持福建省中青年重点项目1项，主持天津市科技支撑项目1项、天津市工业科技开发专项资金项目1项，授权发明专利10项。

团队成员主要科研项目

团队成员发表的主要论文

柯少颖论文

[1] SHI, Z. W., et al. InGaAs/Si Avalanche Photodiode With High Gain and Low Dark Current Achieved by Two-Step Wafer Bonding. *IEEE Transactions on Electron Devices*, 2025.  

[2] DIAO, Y. L., et al. Magnetron sputtering growth and growth mechanism of GeSn films with Sn content exceeding 25% on InP substrates. *Applied Surface Science*, 2025, 699: 163122.  

[3] WANG, Z. R., et al. High-Gain Ge/Si Avalanche Photodetector With Stable Operation Temperature Up to 500 K. *IEEE Electron Device Letters*, 2025.  

[4] MENG, W. H., et al. High-speed low-noise InGaAs/InP PIN photodetectors on a Si platform achieved by oxygen plasma activation bonding. *Optics Letters*, 2025, 50(11): 3549–3552.  

[5] XU, X. J., et al. Selenization Mechanism of Nearly 4 in. Single-Oriented PtSe₂ and PtSe₂/n–-Si/n⁺-Si 2D–3D PIN Wide-Spectrum Polarization Detectors. *ACS Applied Materials & Interfaces*, 2025, 17(20): 29910–29922.  

[6] XU, X. J., et al. Stable Self-Powered Broadband PtSe₂/Si Pin Infrared Photodetector Based on a High-Quality Ultrapure Intrinsic Si Film Exfoliated by Si/SOI Wafer Bonding. *ACS Applied Materials & Interfaces*, 2025, 17(10): 15579–15592.  

[7] LIU, B., et al. Quantum-Confined 0D/2D/3D Heterostructure Photodetectors with an Ultrafast Self-Powered Broadband Response for Short-Wave Infrared Imaging. *ACS Applied Materials & Interfaces*, 2025.  

[8] KE, S. Q., et al. In Situ Selenization Engineered Dual Schottky Heterojunctions: A Novel Architecture for High‐Speed Broadband Photonic Communication Detector Arrays. *Small*, 2025: e07077.  

[9] LI, J. H., et al. Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer. *Optics Express*, 2024, 32(27): 48858–48874.  

[10] SHI, Z. W., et al. Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product. *Physica Scripta*, 2024, 99(11): 115501.  

[11] CHEN, S. P., et al. High-Speed Self-Powered PdSe₂/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe₂ Quantum Island Structure. *ACS Applied Materials & Interfaces*, 2024, 16(32): 42577–42587.  

[12] YE, S. M., et al. Microstructure and ferromagnetism of Mn₀.₀₅Ge₀.₉₅ quantum dots/graphene heterostructures for spintronic devices. *ACS Applied Nano Materials*, 2024, 7(14): 16542–16552.  

[13] JI, T., et al. High-speed broadband PtSe₂/Si 2D-3D pin photodetector with a lightly n-doped Si interlayer based on single-oriented PtSe₂. *ACS Photonics*, 2024, 11(8): 3150–3159.  

[14] SUN, Z. W., et al. Nanometer-thick CsPbBr₃ films with embedded CsPb₂Br₅ nanowires for photodetector applications. *ACS Applied Nano Materials*, 2024, 7(10): 11785–11793.  

[15] KE, S. Y., et al. Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface. *Physica Scripta*, 2024, 99(5): 055006.  

[16] WU, D. Z., et al. Microstructure and room temperature ferromagnetism of double-layered MnₓGe₁−ₓTe polycrystalline modified by the space-layer thickness. *Applied Surface Science*, 2024, 657: 159837.  

[17] WANG, J., et al. Interface characteristics of InP/Si heterojunction fabricated by low-temperature wafer bonding based on microcrystalline Ge interlayer. *Vacuum*, 2024, 223: 113103.  

[18] TAN, C. H., et al. Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing. *Applied Surface Science*, 2024, 657: 159707.  

[19] YAO, L. Q., et al. Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging. *Journal of Physics D: Applied Physics*, 2024, 57(16): 165103.  

[20] CHEN, X. P., et al. Low voltage-driven, high-performance TiO₂ thin film transistors with MHz switching speed. *RSC Advances*, 2024, 14(9): 6058–6063.  

[21] BAO, S. Y., et al. High-gain bandwidth product of wafer-bonded near-infrared III-V/silicon APD using polycrystalline silicon bonding layer. *Physica Scripta*, 2023, 98(12): 125527.  

[22] HUANG, Y., et al. Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer. *Journal of Alloys and Compounds*, 2023, 965: 171485.  

[23] LI, J., KE, S., WANG, J., et al. High-quality Ge/Si hetero-bonding by sputtered microcrystalline Ge interlayer. *Vacuum*, 2023: 112203.  

[24] LIN, G., QIAN, K., DING, H., …, KE, S., et al. Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering. *Applied Surface Science*, 2023, 623: 157086.  

[25] JIAO, J., CHEN, X., RAO, Y., …, KE, S., et al. High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer. *Applied Surface Science*, 2023, 628: 157296.  

[26] CHAI, J., KE, S., HUANG, Y., et al. Effect of bubbles at the bonded interface on the performance of GeSn/Si PIN photodetector. *Physica Scripta*, 2023, 98(6): 065517.  

[27] CHEN, X., JIAO, J., YAO, L., …, KE, S., et al. Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector. *Applied Optics*, 2023, 62(12): 3125–3131.  

[28] KE, S., XIAO, X., JIAO, J., et al. Theoretical achievement of THz gain-bandwidth product of wafer-bonded InGaAs/Si avalanche photodiodes with poly-Si bonding layer. *IEEE Transactions on Electron Devices*, 2022, 69(3): 1123–1128.  

[29] KE, S., LI, J., WANG, J., et al. Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer. *Vacuum*, 2022, 203: 111269.  

[30] LI, X., WANG, Y., CHEN, T., et al. Unencapsulated CsPbClBr₂ Film Photodetectors Grown by Thermal Vacuum Deposition Exhibit Exceptional Environmental Stability in High-Humidity Air. *ACS Applied Energy Materials*, 2022, 5(7): 8709–8716.  

[31] HUANG, D., JI, R., YAO, L., …, KE, S., et al. Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process. *Vacuum*, 2022, 196: 110735.  

[32] HUANG, D., JI, R., YAO, L., …, KE, S., et al. Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature. *Applied Surface Science*, 2021, 568: 150979.  

[33] LI, Z., HUANG, D., JIAO, J., …, KE, S., et al. Effect of the thermal stress on the defect evolution at GaAs/Si wafer bonding with a-Ge intermediate layer. *Semiconductor Science and Technology*, 2021, 36(9): 095005.  

[34] KE, S., CHEN, Z., ZHOU, J., et al. Theoretical prediction of high-performance room-temperature InGaAs/Si single-photon avalanche diode fabricated by semiconductor interlayer bonding. *IEEE Transactions on Electron Devices*, 2021, 68(4): 1694–1701.  

[35] KE, S., LI, D., CHEN, S. A review: wafer bonding of Si-based semiconductors. *Journal of Physics D: Applied Physics*, 2020, 53(32): 323001.  

[36] KE, S., ZHOU, J., WANG, Z., et al. Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics. *Journal of Physics D: Applied Physics*, 2020, 53(16): 165109.  

[37] KE, S., ZHOU, J., HE, S., et al. Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate. *Semiconductor Science and Technology*, 2020, 35(3): 035012.  

[38] KE, S., ZHOU, J., HUANG, D., et al. Polycrystalline Ge intermediate layer for Ge/Si wafer bonding and defect elimination in Si (SOI)-based exfoliated Ge film. *Vacuum*, 2020, 172: 109047.  

[49] KE, S., YE, Y., WU, J., et al. Low-temperature fabrication of wafer-bonded Ge/Si pin photodiodes by layer exfoliation and nanosecond-pulse laser annealing. *IEEE Transactions on Electron Devices*, 2019, 66(3): 1353–1360.  

[40] KE, S., YE, Y., WU, J., et al. Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device. *Journal of Materials Science*, 2019, 54(3): 2406–2416.  

[41] KE, S., YE, Y., LIN, S., et al. Low-temperature oxide-free silicon and germanium wafer bonding based on a sputtered amorphous Ge. *Applied Physics Letters*, 2018, 112(4): 041601.  

[42] KE, S., YE, Y., WU, J., et al. Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding. *Journal of Physics D: Applied Physics*, 2018, 51(26): 265306.  

[43] KE, S., LIN, S., YE, Y., et al. Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering. *Applied Surface Science*, 2018, 434: 433–439.  

[44] KE, S., LIN, S., HUANG, W., et al. Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode. *Journal of Physics D: Applied Physics*, 2017, 50(5): 055106.  

[45] KE, S., LIN, S., YE, Y., et al. Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer. *Journal of Physics D: Applied Physics*, 2017, 50(40): 405305.  

[46] KE, S., LIN, S., MAO, D., et al. Interface state calculation of the wafer-bonded Ge/Si single-photon avalanche photodiode in Geiger mode. *IEEE Transactions on Electron Devices*, 2017, 64(6): 2556–2563.  

[47] KE, S., LIN, S., LI, X., et al. Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO₂ insulator layer. *Optics Express*, 2016, 24(3): 1943–1952.  

[48] KE, S., YE, S., YANG, J., et al. Morphological evolution of self-assembled SiGe islands based on a mixed-phase pre-SiGe island layer grown by ion beam sputtering deposition. *Applied Surface Science*, 2015, 328: 387–394.

黄志伟论文

[1] Ge Y, Huang Z*, et al. 300–2200 nm broadband Si Schottky photodetectors with ultra-low dark current (<10 nA/cm²) via Al₂O₃/SiOₓ interface engineering[J]. IEEE Journal of Lightwave Technology, 2025, 43: 8832.

[2] Ge Y, Huang Z*, Yang M, et al. 532–2200 nm Si Schottky photodetectors featuring nonuniform barrier layers[J]. IEEE Transactions on Electron Devices, 2025, 72: 3667.

[3] Ke S, Wang J, Huang Z*, et al. Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface[J]. Physica Scripta, 2024, 99(5): 055006.

[4] Jiang R, Chen F, Zheng Z, Ke S, Zhou J, Liu G, Huang Z*. Simulation and analysis of extinction properties of Rh nanostructures[J]. Laser & Optoelectronics Progress, 2023, 60(19): 1925001.

[5] Chen F, Jiang R, Zheng Z, Ke S, Zhou J, Liu G, Huang Z*. Simulation and analysis of infrared extinction characteristics of ITO nanorod structures[J]. Acta Optica Sinica, 2023, 43(9): 0916002.

[6] Huang Z, et al. High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode[J]. Chinese Physics B, 2021, 30(3): 037303.

[7] Huang Z, Wang J, Huang W, et al. Research progress of technologies for germanium near-infrared photodetectors[J]. Infrared and Laser Engineering, 2020, 49(1): 0103004.

[8] Huang Z, Yu C, Chang A, et al. High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain[J]. Journal of Materials Science, 2020, 55(20): 8630-8641.

[9] Yu C, Huang Z, et al. High-specific-detectivity, low-dark-current Ge nanowire metal–semiconductor–metal photodetectors fabricated by Ge condensation method[J]. Journal of Physics D: Applied Physics, 2020, 53(12): 125103.

[10] Huang Z, Mao Y, Lin G, et al. Impacts of ITO interlayer thickness on metal/n-Ge contacts[J]. Materials Science and Engineering: B, 2017, 224: 103-109.

[11] Huang Z, Mao Y, Lin G, et al. Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors[J]. Optics Express, 2018, 26(5): 5827-5834.

[12] Huang Z, Mao Y, Chang A, et al. Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection[J]. Applied Physics Express, 2018, 11(10): 102203.

[13] Huang Z, et al. Impacts of excimer laser annealing on Ge epilayer on Si[J]. Applied Physics A, 2017, 123(2): 148.

[14] Huang Z, et al. Suppressing the formation of GeOₓ by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact[J]. Applied Physics Express, 2016, 9(2): 021301.

周锦荣论文

[1] [1]Chen S, Ke S,…Zhou J*, et al. High-Speed Self-Powered PdSe2/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe2 Quantum Island Structure.ACS applied materials & interfaces,2024,Vol.16(32): 42577-42587.

[2] Zhou J, Bao S, …Ke S, et al. Effect of a-Si_1-xGe_x Bonding Layer with Different Ge Compositions on the Performance of InGaAs/Si Avalanche Photodiode. Acta Photonica Sinica，2022,51(09):126-135.

[3] 彭强, 柯海鹏, …周锦荣*等. Ge/Si异质键合界面纳米级氧化层对Ge/Si异质结光电特性调控机制, 硅酸盐学报, 2021, 49(01):180-188.

[4] 周锦荣.功率型白光LED的非线性混合调光方法研究等, 发光学报, 2017, 38(9): 1249-1255.

[5] 周锦荣，陈焕庭，周小方. 白光LED色温的非线性动态预测模型, 发光学报, 2016, 37(1): 106-111.

[6] 周锦荣.白光LED智能调光数学模型, 发光学报 2015, 36(8): 953-956.

刘冠洲论文

[1] Liu G Z, Li C, Lu C B, ...,Ke S, et al. Wet thermal annealing effect on TaN/HfO2/Ge metal-oxide-semiconductor capacitors with and without a GeO2 passivation layer. Chinese Physics B, 2012, 21(11): 117701.

[2] Liu G, Li C, Lai H, ...,Ke S, et al. Ge incorporation in HfO2 dielectric deposited on Ge substrate during dry/wet thermal annealing. Journal of the Electrochemical Society, 2010, 157(6): H603.

陈赐海论文

[1] [1] LV, Q.; et al. A Bioinspired Low-Power Optoelectronic Synaptic Transistor for Artificial Visual Recognition and Multilevel Optical Storage. ACS Appl. Mater. Interfaces 2025.

[2] LIU, G.; et al. Determining 2-D Optical Characteristics-Dependent Surface Temperature of Organic Light-Emitting Diode. IEEE Trans. Electron Devices 2023, *70*(12), 6427–6434.

[3] SHI, J.; et al. Optoelectronic Synaptic Transistors via Adding Insulator into Semiconductor for Brain-Inspired Computing. IEEE Trans. Electron Devices 2024.

[4] CHEN, C.; et al. Low-Temperature Solution-Processed Nanoparticle-Doped Nickel Oxide Thin-Film Transistor. J. Appl. Phys. 2023, *133*(5).

[5] LI, X.; et al. Effect of the Methane Flow Ratio on the Structural and Mechanical Properties of High-Entropy Alloy Co-Doped DLC Films. Diam. Relat. Mater. 2021, *117*, 108486.

[6] CHEN, C.; et al. Structure and Cutting Performance of Ti-DLC Films Prepared by Reactive Magnetron Sputtering. Diam. Relat. Mater. 2020, *104*, 107735.

[7] LI, X.; TANG, W.; CHEN, C.; et al. Effects of Sputtering Time on Structure and Mechanical Properties of (AlCrNb)N Coatings Deposited by High-Power Impulse Magnetron Cosputtering. JOM 2020, *72*(6), 2164–2173.

[8] CHEN, C.; YANG, Q.; CHEN, G.; et al. Solution-Processed Oxide Complementary Inverter via Laser Annealing and Inkjet Printing. IEEE Trans. Electron Devices 2019, *66*(11), 4888–4893.

[9] CHEN, C.; YANG, H.; YANG, Q.; et al. Low-Temperature Solution-Processed Flexible Metal Oxide Thin-Film Transistors via Laser Annealing. J. Phys. D: Appl. Phys. 2019, *52*(38), 385105.

[10] LI, X.; CHEN, C.; XU, C. Optimization of Interlayer/CrWN Bilayer Films Fabricated and Monitored under Shewhart Control. J. Mater. Eng. Perform. 2019, *28*(11), 6993–7005.

[11] LI, X.; et al. Effect of Annealing Treatment on the Structure and Performance of Transparent Conductive AZO/Al2O3 Bi-Layer Films. Mater. Res. Express 2019, *6*(9), 096414.

[12] SUN, D.; CHEN, C.; ZHANG, J.; et al. High Performance Inkjet-Printed Metal Oxide Thin Film Transistors via Addition of Insulating Polymer with Proper Molecular Weight. Appl. Phys. Lett. 2018, *112*(1), 012102.

[13] CHEN, C.; CHEN, G.; YANG, H.; et al. Solution-Processed Metal Oxide Arrays Using Femtosecond Laser Ablation and Annealing for Thin-Film Transistors. J. Mater. Chem. C 2017, *5*(36), 9273–9280.

[14] YANG, H.; CHEN, C.; et al. Solution Processed Organic Thin Film Transistor Arrays with Assistance of Laser Ablation. ACS Appl. Mater. Interfaces 2017, *9*(4), 3849–3856.

实验室团队成员获得授权发明专利:

(1) 一种利用微晶锗薄膜实现低温Si-Ge和Si-InP键合的方法，专利号202211165174.4

(2) 一种实现晶格阻断的零气泡Ge/Si异质混合集成方法，专利号201910940185.7

(3) 一种耐高温高质量SOI基剥离Ge薄膜的制备方法，专利号201910938320.4

(4) 一种提高剥离Si基和SOI基Ge薄膜质量的方法，专利号201910939228.X

(5) 一种无气泡坑超高质量SOI基Ge薄膜异质键合方法，专利号201910942951.3

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